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HGH25N120A Datasheet, HUASHAN ELECTRONIC

HGH25N120A transistor equivalent, n-channel enhancement mode field effect transistor.

HGH25N120A Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 0.96MB)

HGH25N120A Datasheet
HGH25N120A Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 0.96MB)

HGH25N120A Datasheet

Features and benefits

TO-3P
* Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V
* High input impedance
* Field stop trench technology offer superior conduction and switching perf.

Application


* Induction heating and Microwave oven
* Soft switching applications █ Features TO-3P
* Low saturation vol.

Description

Collector to Emitter Voltage Gate to Emitter Voltage Collector Current(TC = 25℃) Collector Current(TC = 100℃) Ratings 1200 ±30 50 25 Units V V A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current (TC = 100℃) 15 A Max.

Image gallery

HGH25N120A Page 1 HGH25N120A Page 2 HGH25N120A Page 3

TAGS

HGH25N120A
N-Channel
Enhancement
Mode
Field
Effect
Transistor
HUASHAN ELECTRONIC

Manufacturer


HUASHAN ELECTRONIC

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